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Investigations on Magnetron Sputtered Titanium based Oxide Films
For Microelectronic Devices
Language
English
English
Book
Paperback
The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacemen...
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Libristo code: 13497571
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155 b
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The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.
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About the book
Full name
Investigations on Magnetron Sputtered Titanium based Oxide Films
Language
English
English
Binding
Book - Paperback
Date of issue
2016
Number of pages
180
EAN
9783659874819
Libristo code
13497571
Publishers
LAP Lambert Academic Publishing
Weight
284
Dimensions
150 x 220 x 11
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