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Contents: Some Aspects of Present and Future High Resolution Electron Microscopy and Image Processing (H Hashimoto); Imaging Defects by TEM and SEM (P B Hirsch); Electron Microscopy and Science (E Zeitler); The Significance of Electron Microscopy in Materials Science and Engineering (G Thomas); Defects Characteristics Identification by Means of the Convergent-Beam Electron Diffraction and Imaging Technique (K H Kuo & R H Wang); STM Image "Artifacts" Studied by Combined In-Situ STM-REM (J C H Spence & W Lo); In Situ REM Study of Structural Transformations on Si Surfaces (A L Aseev et al.); Incoherence Effects in Reflection Electron Microscopy (A Howie et al.); Reflection Electron Holography of Single Crystal Surfaces (H Banzhof et al.); Quantitative Analysis of Electron Diffraction with Imaging Plate (D Shindo et al.); Determination of the Displacement Vector at a Stacking Fault Using Convergent-Beam Electron Diffraction (M Tanaka et al.); Quantitative Structure Images of Crystal Surfaces and Interfaces (M Shiojiri); High Resolution Electron Microscopy of Dislocations in Compound Crystals (K Suzuki & S Takeuchi); TEM-Investigation of an Electron-Irradiated Fe-Cr-Ni Alloy (S Yamamoto & Y Ishida); and other papers;
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